bso330n02k g opti mos ? 2 power-transistor features ? for fast switching converters and sync. rectification ? qualified according to jedec 1) for target applications ? dual n-channel ? excellent gate charge x r ds(on) product (fom) ? low on-resistance r ds(on) ? avalanche rated ? pb-free plating; rohs compliant ? halogen-free according to iec61249-2-21 maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit 10 secs steady state continuous drain current i d v gs =4.5v, t c =25 c 2) 6.5 5.4 a v gs =4.5v, t c =70 c 2) 5.2 4.3 v gs =2.5v, t c =25 c 2) 5.1 4.2 a v gs =2.5v, t c =70 c 2) 4 3.3 pulsed drain current i d,pulse t c =25 c 3) avalanche energy, single pulse e as i d =6.5 a, r gs =25 ? mj reverse diode d v /d t d v /d t i d =6.5 a, v ds =20 v, d i /d t =200 a/s, t j,max =150 c kv/s gate source voltage v gs v power dissipation p tot t a =25 c 2) 2.0 1.4 w t a =25 c 1) operating and storage temperature t j , t stg c esd class ? super logic level 2.5v rated; n-channel value -55 ... 150 12 6 19 26 2.5 0 (0v to 250v) pg-dso-8 type package marking bso330n02k pg-dso-8 330n2k v ds 20 v r ds(on),max v gs =4.5 v 30 m ? v gs =2.5 v 50 i d 6.5 a product summary rev.1.02 page 1 2010-05-12
iec climatic category; din iec 68-1 55/150/56 rev.1.02 page 2 2010-05-12
bso330n02k g thermal characteristics thermal resistance, junction - soldering point r thjs - - 50 k/w thermal resistance, junction - ambient r thja minimal footprint, t p 10 s - - 110 minimal footprint, steady state - - 150 6 cm 2 cooling area 2) , t p 10 s --63 6 cm 2 cooling area 2) , steady state --90 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =1 ma 20 - - v gate threshold voltage v gs(th) v ds = v gs , i d =20 a 0.7 0.95 1.2 zero gate voltage drain current i dss v ds =20 v, v gs =0 v, t j =25 c --1a v ds =20 v, v gs =0 v, t j =125 c - - 100 gate-source leakage current i gss v gs =12 v, v ds =0 v - - 100 na drain-source on-state resistance r ds(on) v gs =2.5 v, i d =5.1 a -3850 m ? v gs =4.5 v, i d =6.5 a -2430 gate resistance r g - 1.3 - ? transconductance g fs | v ds |>2| i d | r ds(on)max , i d =6.5 a 10 20 - s 2) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. 1) j-std20 and jesd22 rev.1.02 page 3 2010-05-12
bso330n02k g parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 550 730 pf output capacitance c oss - 190 250 reverse transfer capacitance c rss -2639 turn-on delay time t d(on) - 7.4 - ns rise time t r - 16.8 - turn-off delay time t d(off) - 13.4 - fall time t f - 2.8 - gate char g e characteristics 4) gate to source charge q gs - 1.2 1.6 nc gate charge at threshold q g(th) - 0.5 0.7 gate to drain charge q gd - 0.7 1.1 switching charge q sw - 1.4 2 gate charge total q g - 3.7 4.9 gate plateau voltage v plateau - 2.2 - v gate charge total, sync. fet q g(sync) v ds =0.1 v, v gs =0 to 4.5 v - 3.4 4.5 nc output charge q oss v dd =10 v, v gs =0 v - 2.6 3.4 reverse diode diode continuous forward current i s - - 1.5 a diode pulse current i s,pulse --26 diode forward voltage v sd v gs =0 v, i f =6.5 a, t j =25 c - 0.88 1.2 v reverse recovery time t rr v r =10 v, i f =6.5 a, d i f /d t =100 a/s -14-ns reverse recovery charge q rr v r =10 v, i f =6.5 a, d i f /d t =100 a/s - 4.8 - nc 4) see figure 16 for gate charge parameter definition t c =25 c values v gs =0 v, v ds =10 v, f =1 mhz v dd =10 v, v gs =4.5 v, i d =6.5 a, r g =1.6 ? v dd =10 v, i d =6.5 a, v gs =0 to 4.5 v rev.1.02 page 4 2010-05-12
bso330n02k g 1 power dissipation 2 drain current p tot =f( t a ); t p 10 s i d =f( t a ); v gs 4.5 v; t p 10 s 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t a =25 c 1) ; d =0 z thja =f( t p ) 2) parameter: t p parameter: d = t p / t single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 3 10 2 10 1 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 2 10 1 10 0 10 -1 t p [s] z thja [k/w] 0 0.5 1 1.5 2 2.5 0 40 80 120 160 t a [c] p tot [w] 0 1 2 3 4 5 6 7 0 40 80 120 160 t a [c] i d [a] 1 s 10 s 100 s 1 ms 10 ms 100 ms dc 10 2 10 1 10 0 10 -1 10 2 10 1 10 0 10 -1 10 -2 v ds [v] i d [a] rev.1.02 page 5 2010-05-12
bso330n02k g 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j 2 v 2.2 v 2.5 v 3 v 3.5 v 4 v 4.5 v 0 10 20 30 40 50 60 048121620 i d [a] r ds(on) [m ? ] 25 c 150 c 0 4 8 12 16 20 0123 v gs [v] i d [a] 0 10 20 30 048121620 i d [a] g fs [s] 1.6 v 1.8 v 2 v 2.2 v 2.4 v 2.5 v 3 v 4 v 0 10 20 30 0123 v ds [v] i d [a] rev.1.02 page 6 2010-05-12
bso330n02k g 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =6.5 a; v gs =4.5 v v gs(th) =f( t j ); v gs = v ds 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ 98% 0 10 20 30 40 50 -60 -20 20 60 100 140 t j [c] r ds(on) [m ? ] ciss coss crss 10 3 10 2 10 1 0 5 10 15 20 v ds [v] c [pf] 25 c 150 c 150 c, 98% 25 c, 98% 10 2 10 1 10 0 10 -1 0 0.5 1 1.5 2 v sd [v] i f [a] 20 a 200 a 0 0.4 0.8 1.2 1.6 -60 -20 20 60 100 140 t j [c] v gs(th) [v] rev.1.02 page 7 2010-05-12
bso330n02k g 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 ? v gs =f( q gate ); i d =6.5 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =1 ma 16 18 20 22 24 -60 -20 20 60 100 140 t j [c] v br(dss) [v] v gs q gate v gs(th) q g(th) q gs q gd q sw q g 25 c 100 c 125 c 10 3 10 2 10 1 10 0 10 1 10 0 10 -1 t av [s] i av [a] 4 v 10 v 16 v 0 1 2 3 4 5 012345 q gate [nc] v gs [v] rev.1.02 page 8 2010-05-12
bso330n02k g package outline pg-tdson-8 pg-dso-8: outline rev.1.02 page 9 2010-05-12
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